Titanium single-electron transistor fabricated by electron-beam lithography

Proximity effect of electron beam lithography for single-electron transistor fabrication

In this letter, we shall describe a method, utilizing the proximity effect in electron beam lithography, suitable for fabricating silicon dots and devices, and demonstrate the electronic characteristics of the Si single-electron transistor. The drain current sIdd of the device oscillates against gate voltage. The electrical characteristics of the single-electron transistor were observed to be c...

Modeling and Simulation of a Molecular Single-Electron Transistor

In this paper, to understand the concept of coupling, molecule density of states that coupled to the metal electrodes will be explained then, based on this concept, a weak and strong coupling for the molecules attached to the metal electrodes will be described. Capacitance model is used to explore the connection of addition energy with the Electron affinity and the ionization energy of the mole...

Dopant Driven Electron Beam Lithography

Introduction to Electron Beam Lithography

Electron Beam Lithography is a specialized technique for creating extremely fine patterns (~ 50 nm). Derived from the early scanning electron microscopes, the technique in brief consists of scanning a beam of electrons across a surface covered with a resist film sensitive to those electrons, thus depositing energy in the desired pattern in the resist film. The main attributes of the technology ...

Inductive single-electron transistor.

We demonstrate a sensitive method of charge detection based on radio-frequency readout of the Josephson inductance of a superconducting single-electron transistor. Charge sensitivity 1.4 x 10(-4) e/square root Hz, limited by a preamplifier, is achieved in an operation mode which takes advantage of the nonlinearity of the Josephson potential. Owing to reactive readout, our setup has more than 2 ...